SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 95 ✪
PARTMARKING DETAILS - BSS82B - CL
BSS82C - CM
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-60 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-800 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range t
j
:t
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-60 V
I
C
=-10µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-60 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
I
E
=-10µA
Collector Cut-Off
Current
I
CBO
-10
-10
nA
µA
V
CB
=-50V,
V
CB
=-50V, T
amb
=150 °C
Emitter Cut-Off
Current
I
EBO
-10 nA V
BE
=-3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.4
-1.6
V
V
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=50mA*
Static Forward
Current
Transfer Ratio
BSS80B
BSS80C
h
FE
40
100
120
300
I
C
=150mA,V
CE
=10V
I
C
=150mA,V
CE
=10V
Transition Frequency f
T
200 MHz V
CE
=-20V,I
C
=-50mA
f=100MHz
Output Capacitance C
obo
8pFV
CB
=-10V,f=1MHz
Delay Time
t
d
10 ns
V
CC
=-30V, I
C
=-150mA
I
B1
=-I
B2
=-15mA
Rise Time t
r
40 ns
Storage Time t
s
80 ns
Fall Time t
f
30 ns
* Measured under pulsed conditions. Pulse width = 300
µs. Duty cycle 2%
BSS82B
BSS82C
C
B
E
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