SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 SEPTEMBER 95 ✪
PARTMARKING DETAILS - BSS79B - CE
BSS79C - CF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
75 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6V
Peak Pulse Current I
CM
800 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range t
j
:t
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
75 V
I
C
=10µA
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
40 V I
C
=10mA
Emitter-Base Breakdown Voltage V
(BR)EBO
6V
IE=10
µA
Collector Base Cut-Off Current I
CBO
10
10
nA
µA
V
CB
=60V
V
CB
=60V, T
amb
=150
o
C
Emitter Base Cut-Off Current I
EBO
10 nA V
BE
=3.0V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.3
1.0
V
V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
Static Forward
Current
Transfer Ratio
BSS79B
BSS79C
h
FE
40
100
120
300
I
C
=150mA, V
CE
=10V
I
C
= 150mA, V
CE
=10V
Transition Frequency f
T
250 MHz V
CE
=20V, I
C
=20mA
f=100MHz
Collector-Base Capacitance C
obo
8pFV
CB
=10V, f=1MHz
Delay Time
t
d
10 ns V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
Rise Time t
r
10 ns
Storage Time t
s
225 ns V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
Fall Time t
f
60 ns
BSS79B
BSS79C
C
B
E
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