SOT23 NPN SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995 ✪
PARTMARKING DETAILS BSS66 - M6
BSS67 - M7
BSS66R - M8
BSS67R - M9
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6V
Peak Pulse Current I
CM
200 mA
Continuous Collector Current I
C
100 mA
Base Current I
B
50 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range t
j
:t
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage V 40 V I =1mA
Collector-Base Breakdown Voltage V
60 V
I
=10µA
Emitter-Base Breakdown Voltage V
6V
I
=10µA
Collector- Emitter Cut-off Current I
50 nA V =30V
Collector-Emitter
Saturation Voltage
V
0.20
0.30
V
V
I =10mA, I =1mA
I
=50mA, I =5mA*
Base-Emitter Saturation Voltage V
0.65 0.85
0.95
V
V
I
C
=10mA, I =1mA
I
=50mA, I =5mA*
Static Forward Current BSS66
Transfer Ratio
h
20
35
50
30
15
150
I
=100µA,
I
=1mA,
I
=10mA, V =1V
I
=50mA*,
I
=100mA*,
Static Forward Current BSS67
Transfer Ratio
h
40
70
100
60
30
300
I
=100µA,
I
=1mA,
I
=10mA, V =1V
I
=50mA*,
I
=100mA*,
Transition Frequency BSS66
BSS67
f
250
300
MHz
MHz
I =10mA, V =20V
f=100MHz
Collector-Base Capacitance C
4pF V=5V, f=100kHz
Emitter-Base Capacitance C
8pF V=0.5V, f=100kHz
Noise Figure N Typ. 6 dB
I
=100µA, V =5V
R
=1kΩ, f=10Hz to15.7 kHz
Switching times: Delay; Rise
Storage Time
Fall Time
t
; t
t
t
35
200
50
ns
ns
ns
V
=3V, I =10mA
I
= I =1mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BSS66
BSS67
C
B
E
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