SOT23 PNP SILICON PLANAR
HIGH SPEED TRANSISTOR
ISSUE 2 - SEPTEMBER 1995 ✪
PARTMARKING DETAIL BSS65 - L1
BSS65R - L5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-12 V
Collector-Emitter Voltage V
CEO
-12 V
Emitter-Base Voltage V
EBO
-4 V
Peak Pulse Current I
CM
-200 mA
Continuous Collector Current I
C
-100 mA
Base Current I
C
-50 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range t
j
:t
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
BreakdownVoltages V
(BR)CEO
-12 V I
C
=-10mA
V
(BR)CBO
-12 V
I
C
=-10µA *
V
(BR)EBO
-4 V
I
E
=-10µA
Cut-Off Currents I
CBO
-100 nA V
CB
=-6V, I
E
=0
I
EBO
-100 nA V
EB
=-4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.25
V
V
I
C
=-10mA, I
B
=-1mA
I
C
=-30mA, I
B
=-3mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.75
-0.82
-0.98
-1.20
V
V
I
C
=-10mA, I
B
=-1mA
I
C
=-30mA, I
B
=-3mA
Static Forward Current
Transfer Ratio
h
FE
30
40 150
I
C
=-10mA, V
CE
=-0.3V
I
C
=-30mA, V
CE
=-0.5V
Transition Frequency f
T
400 MHz I
C
=-30mA, V
CE
=-10V,
f=100MHz
Collector-Base
Capacitance
C
obo
6pFV
CB
=-5V, I
E
=0,
f=1MHz
Emitter Base Capacitance
C
ebo
6pFV
EB
=-0.5V, I
C
=0, f=1MHz
Switching Times
Turn-On Time
Turn-Off Time
t
on
t
off
23
34
60
90
nS
nS
I
C
=-30mA
I
B1
= -I
B2
= -1.5mA
V
CC
=-10V
BSS65
C
B
E
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