SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95 ✪
COMPLIMENTARY TYPE - BSS63
PARTMARKING DETAIL - BSS64 - U3
BSS64R - U6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
120 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
100 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range t
j
:t
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
120 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80 V I
C
=4mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off Current I
CBO
100
50
nA
µ A
V
CB
=90V
V
CB
=90V,T
j
=150
o
C
Emitter Cut-Off Current I
EBO
200 nA V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
150
200
mV
mV
I
C
=4mA, I
B
=400µA
I
C
=50mA, I
B
=15mA
Base-Emitter Saturation
Voltage
V
BE(sat)
1.2 mV
I
C
=4mA, I
B
=400µA
Static Forward Current
h
FE
20
Typ.
60
80
55
I
C
=1mA, V
CE
=-1V
I
C
=10mA, V
CE
=1V
I
C
=20mA, V
CE
=1V
Transition Frequency
f
T
60
Typ.
100 MHz V
CE
=10V, I
C
=4mA
f=35 MHz
Output Capacitance
C
obo
Typ.
35pFV
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
BSS64
C
B
E
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