1998. 6. 15 1/1
SEMICONDUCTOR
TECHNICAL DATA
BSS64
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
Type Name
Marking
Lot No.
U6
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
120 V
Collector-Emitter Voltage
V
CEO
80 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
Emitter Current
I
E
-100 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
ᴱ
Storage Temperature Range
T
stg
-65ᴕ150
ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=4mA, I
B
=0
80 - - V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100ỌA, I
E
=0
120 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=100ỌA, I
C
=0
5.0 - - V
Collector Cut-off Current
I
CBO
V
CB
=90V, I
E
=0
- - 100 nA
V
CB
=90V, I
E
=0, Ta=150ᴱ
- - 50
ỌA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
- - 200 nA
DC Current Gain
h
FE
V
CE
=1V, I
C
=1mA
- 60 -
V
CE
=1V, I
C
=4mA
20 - -
V
CE
=1V, I
C
=10mA
- 80 -
V
CE
=1V, I
C
=20mA
- 55 -
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=4mA, I
B
=0.4mA
- - 1.2 V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=4mA, I
B
=0.4mA
- - 0.15
V
I
C
=50mA, I
B
=15mA
- - 0.2
Transition Frequency
f
T
V
CE
=10V, I
C
=4mA, f=100MHz
60 - - MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
- - 5.0 pF