1998. 6. 15 1/1
SEMICONDUCTOR
TECHNICAL DATA
BSS63
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
Type Name
Marking
Lot No.
T6
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-100 - - V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10ỌA, I
E
=0
-110 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10ỌA, I
C
=0
-6 - - V
Collector Cut-off Current
I
CBO
V
CB
=-90V, I
E
=0
- - -100 nA
V
CB
=-90V, I
E
=0, Ta=150ᴱ
- - -50
ỌA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
- - -200 nA
DC Current Gain
h
FE
V
CE
=-1V, I
C
=-10mA
30 - -
V
CE
=-1V, I
C
=-25mA
30 - -
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-25mA, I
B
=-2.5mA
- - -0.9 V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-25mA, I
B
=-2.5mA
- - -0.25
V
I
C
=-75mA, I
B
=-7.5mA
- - -0.9
Transition Frequency
f
T
I
C
=-25mA, V
CE
=-5V, f=100MHz
50 - - MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
- 3 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-110 V
Collector-Emitter Voltage
V
CEO
-100 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-100 mA
Emitter Current
I
E
100 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
ᴱ
Storage Temperature Range
T
stg
-65ᴕ150
ᴱ
