SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95 ✪
COMPLIMENTARY TYPE BSS64
PARTMARKING DETAIL BSS63 - T3
BSS63R - T6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-110 V
Collector-Emitter Voltage V
CEO
-100 V
Emitter-Base Voltage V
EBO
-6 V
Continuous Collector Current I
C
-100 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range t
j
:t
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)
-110 V
I
C
=-10µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-100 V
I
C
=-100µA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6 V
I
E
=-10µA
Collector Cut-Off Current I
EBO
-100
-50
nA
µ A
V
CB
=-90V,
V
CB
=-90V,T
amb
=150
o
C
Emitter Cut-Off Current I
EBO
-200 nA V
EB
=-6V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-250 mV I
C
=-25mA, I
B
=-2.5mA
Base-Emitter Saturation
Voltage
V
BE(sat)
-900 mV I
C
=-25mA, I
B
=-2.5mA
Static Forward Current
h
FE
30
30
I
C
=-10mA, V
CE
=-1V
I
C
=25mA, V
CE
=1V
Transition Frequency
f
T
50
Typ
85 MHz
V
CE
=-5V, I
C
=25mA
f=35 MHz
Output Capacitance C
obo
Typ.
3pF
V
CB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
BSS63
C
B
E
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