SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996 ✪
PARTMARKIN G DETAI L – SS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
50 V
Continuous Drain Current at T
amb
=25°C I
D
200 mA
Pulsed Drain Current I
DM
800 mA
Gate-Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
360 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
50 V I
D
=0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.5 1.5 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
0.5
5
100
µA
µA
nA
V
DS
=50 V, V
GS
=0
V
DS
=50 V, V
GS
=0V, T=125°C(2)
V
DS
=20 V, V
GS
=0
Static Drain-Source
On-State Resistance (1)
R
DS(on)
3.5
Ω
V
GS
=5V,I
D
=200mA
Forward
Transconductance(1)( 2)
g
fs
120 mS V
DS
=25V,I
D
=200mA
Input Capacitance (2) C
iss
50 pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Common Source
Output Capacitance (2)
C
oss
25 pF
Reverse Transfer
Capacitance (2)
C
rss
8pF
Turn-On Delay Time (2)(3) t
d(on)
10 ns
V
DD
≈30V, I
D
=280mA
Rise Time (2)(3) t
r
10 ns
Turn-Off Delay Time (2)(3) t
d(off)
15 ns
Fall Time (2)(3) t
f
25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
BSS138
D
G
S
SOT23
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