SOT89 NPN SILICON P LANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996 ✪
COMPLEMENTA RY TYPES – BSR40 – BSR30
BSR42 – BSR32
PARTMARKING DETAIL – BSR40 – AR1
BSR42 – AR3
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL BSR40 BSR42 UNIT
Collector-Base Voltage V
CBO
70 90 V
Collector-Emitter Voltage V
CEO
60 80 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Base Current I
B
100 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. U NIT CONDITIONS.
Collector-Base BSR40
Breakdown Voltage BSR42
V
(BR)CBO
70
90
V
V
I
C
=100µA
I
C
=100µA
Collector-Emitter BSR40
Breakdown Voltage BSR42
V
(BR)CEO
60
80
V
V
I
C
=10mA
I
C
=10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=10µA
Collector Cut-Off
Current
I
CBO
100
50
nA
µA
V
CB
=60V
V
CB
=60V, T
amb
=125°C
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
1.2
V
V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
Static Forward
Current Transfer Ratio
h
FE
10
40
30
120
I
C
=100µA, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
Collector Capacitance C
c
12 pF V
CB
=10V, f =1MHz
Emitter Capacitence C
e
90 pF V
EB
=0.5V, f=1MHz
Transition Frequency f
T
100 MHz I
C
=50mA, V
CE
=10V
f =35MHz
Turn-On Time T
on
250 ns V
CC
=20V, I
C
=100mA
I
B1
=-I
B2
=-5mA
Turn-Off Time T
off
1000 ns
*Measure d under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT493 datasheet.
BSR40
BSR42
C
B
3 - 67
