SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
COMPLEMENTARY TYPE BSP31 BSP41
BSP33 BSP43
PARTMARKING DETAIL Device type in full
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BSP31 BSP33 UNIT
Collector-Base Voltage V
CBO
-70 -90 V
Collector-Emitter Voltage V
CEO
-60 -80 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
TOT
2W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base BSP31
Breakdown Voltage BSP33
V
(BR)CBO
-70
-90
V
V
I
C
=-100µA
I
C
=-100µA
Collector-Emitter BSP31
Breakdown Voltage BSP33
V
(BR)CEO
-60
-80
VI
C
=-10mA
I
C
=-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-10µA
Collector Cut-Off Current I
CBO
-100
-50
nA
µA
V
CB
=-60V
V
CB
=-60V, T
amb
=125°C
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.25
-0.5
V
V
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0
-1.2
V
V
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
Static Forward Current
Transfer Ratio
h
FE
30
100
50
300
I
C
=-100µA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V
Collector Capacitance C
c
20 pF V
CB
=-10V, f =1MHz
Emitter Capacitance C
e
120 pF V
EB
=-0.5V, f =1MHz
Transition Frequency f
T
100 MHz I
C
=-50mA, V
CE
=-10V
f =35MHz
Turn-On Time T
on
500 ns V
CC
=-20V, I
C
=-100mA
I
B1
=-I
B2
=-5mA
Turn-Off Time T
off
650 ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
BSP31
BSP33
C
C
E
B
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