N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 200 Volt V
DS
*R
DS(on)
=23Ω
REFER TO BS107PT FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
200 V
Continuous Drain Current at T
amb
=25°C I
D
0.12 A
Pulsed Drain Current I
DM
2A
Gate-Source Voltage V
GS
±20
V
Power Dissipation at T
amb
=25°C P
tot
500 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
200 230 V
I
D
=100µA, V
GS
=0V
Gate Body Leakage I
GSS
10 nA VGS=15V, V
DS
=0V
Drain Cut-Off Current I
DSS
30 nA V
GS
=0V, V
DS
=130V
Drain Cut-Off Current I
DSX
1
µA
V
GS
=0.2V, V
DS
=70V
Static Drain-Source
on-State Resistance
R
DS(on)
15 23
30
Ω
Ω
V
GS
=2.6V, I
D
=25mA*
V
GS
=5V, I
D
=100mA*
* Measur ed under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BS107P
3-23
D
G
S
E-Line
TO92 Compatible
