1999. 11. 30 1/1
SEMICONDUCTOR
TECHNICAL DATA
BFS20/BF599
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
MAXIMUM RATING (Ta=25
)
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
40 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=2mA, I
B
=0
25 - - V
Emitter-Base
Breakdown Voltage
BFS20
V
(BR)EBO
I
E
=10 A, I
C
=0
4
- - V
BF599 5
Collector Cut-off Current
BFS20
I
CBO
V
CB
=20V, I
E
=0
- - 100 nA
V
CB
=20V, I
E
=0, Ta=150
- - 10
A
BF599
V
CB
=40V, I
E
=0
- - 100 nA
DC Current Gain
h
FE
V
CE
=10V, I
C
=7mA
40 - - -
Base-Emitter Voltage
BFS20
V
BE(ON)
V
CE
=10V, I
C
=7mA
- 750 900
mV
BF599 - 750 -
Transition Frequency
BFS20
f
T
V
CE
=10V, I
C
=7mA, f=100MHz
275 550 -
MHz
BF599 - 550 -
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
- 0.35 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
25 V
Emitter-Base Voltage
BFS20
V
EBO
4
V
BF599 5
Collector Current
I
C
25 mA
Emitter Current
I
E
-25 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
TYPE MARK
BFS20 G1
BF599 G2
MARK SPEC
Lot No.
Lot No.
