C
B
E
SOT23
SOT23 NPN SILICON PLANAR
VHF TRANSISTOR
ISSUE 3 JANUARY 1996 ✪
PARTMARKING DETAIL G1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
30 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
4V
Peak Pulse Current I
CM
25 mA
Continuous Collector Current I
C
25 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
I
CBO
100
10
nA
µA
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0,
T
amb
=100°C
Base-Emitter Voltage V
BE
740 900 mV I
C
=7mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
40 85 I
C
=7mA, V
CE
=10V*
Transition Frequency f
T
275 450 MHz I
C
=5mA, V
CE
=10V
f=100MHz
Feedback Capacitance C
re
0.35 0.40 pF I
C
=1mA, V
CE
=10V
f=1MHz
Collector Capacitance C
TC
0.8 pF I
E
=I
e
=0, V
CB
=10V
f=1MHz
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
3 - 53
BFS20
