C
SOT23 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS — BFS17L - E1L
BFS17H - E1H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
25 V
Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
2.5 V
Peak Pulse Current I
CM
50 mA
Continuous Collector Current I
C
25 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
I
CBO
10
10
nA
µA
V
CB
=10V, I
E
=0
V
CB
=10V, I
E
=0,
T
amb
= 100°C
Static Forward Current
Transfer Ratio
h
FE
BFS17L 25 100 I
C
=2.0mA, V
CE
=1.0V
BFS17H 70 200 I
C
=2.0mA, V
CE
=1.0V
20 125 I
C
=25mA, V
CE
=1.0V
Transition
Frequency
f
T
1.0
1.3
GHz
GHz
I
C
=2.0mA, V
CE
=5.0V
f=500MHz
I
C
=25mA, V
CE
=5.0V
f=500MHz
Feedback Capacitance -C
re
0.85 pF I
C
=2.0mA, V
CE
=5V, f=1MHz
Output Capacitance C
obo
1.5 pF V
CB
=10V, f=1MHz
Input Capacitance C
ibo
2.0 pF V
EB
=0.5V, f=1MHz
Noise Figure N 4.5 dB I
C
=2.0mA, V
CE
=5.0V
R
S
=50Ω, f=500MHz
Intermodulation
Distortion
d
im
-45 dB I
C
=10mA, V
CE
=6.0V
R
L
=37.5Ω,T
amb
=25°C
V
o
=100mV at f
p
=183MHz
V
o
=100mV at f
q
=200MHz
measured at f
(2q-p)
=217MHz
BFS17L
BFS17H
B
E
Spice parameter data is available upon request for this device
TBA
BFS17H and BFS17L are Obsolete
Please Use BFS17N
