SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - JANUARY 1996 ✪
COMPLEMENTA RY TYPE - BFN18
PARTMARKING DETAIL - DH
ABSOLU TE MAXIM UM RATIN GS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-300 V
Collector-Emitter Voltage V
CEO
-300 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-500 mA
Continuous Co llector Current I
C
-200 mA
Base Current I
B
-100 mA
Power Dissipa tion at T
amb
=25°C P
tot
-1 W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRIC AL CH ARA CTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Vo ltage
V
(BR)CBO
-300 V
I
C
=-100µA
Collector-Emitter
Breakdown Vo ltage
V
(BR)CEO
-300 V I
C
=-1mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 V
I
E
=-100µA
Collector Cut-Off Current I
CBO
-100
-20
nA
µA
V
CB
=-250V
V
CB
=-250V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5 V I
C
=-20mA, I
B
=-2mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 V I
C
=-20mA, I
B
=-2mA
Static Forward Current
Transfer Ratio
h
FE
25
40
30
I
C
=-1mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=-10V*
Transition
Freq ue ncy
f
T
Typ.
100
MHz I
C
=-20mA, V
CE
=-10V
f=20MHz
Output Capacita nce C
obo
Typ.
2.5
pF V
CB
=-30V,f=1MHz
*Measur ed under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA92 datasheet.
BFN19
C
B
3 - 45
