SOT89 NPN SILICON P LANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995 ✪
COMPLEMENTA RY TYPE - BFN17
PARTMARKING DETAILS - DD
ABSOLU TE MAXIM UM RATIN GS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
250 V
Collector-Emitter Voltage V
CEO
250 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
500 mA
Continuous Co llector Current I
C
200 mA
Base Current I
B
100 mA
Power Dissipa tion at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRIC AL CH ARA CTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIO NS.
Collector-Base
Breakdown Vo ltage
V
(BR)CBO
250 V
I
C
=100µA
Collector-Emitter
Breakdown Vo ltage
V
(BR)CEO
250 V I
C
=1mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off Current I
CBO
100
20
nA
µA
V
CB
=250V
V
CB
=250V, T
amb
=150 °C
Emitter Cut-Off Current I
EBO
100 nA V
EB
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4 V I
C
=20mA, I
B
=2mA
Base-Emitter Saturation
Voltage
V
BE(sat)
0.9 V I
C
=20mA, I
B
=2mA
Static Forward Current
Transfer Ratio
h
FE
25
40
40
I
C
=1mA,V
CE
=10V*
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
Transition Fre quency f
T
Typ.70 MHz I
C
=20mA, V
CE
=10V*
f=20MHz
Output Capacita nce C
obo
Typ.1.5 pF V
CB
=30V,f=1MHz
* Measur ed under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet
BFN16
C
B
C
E
3 - 42
