SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – MARCH 2001 ✪
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BF720
PARTMARKING DETAILS:- BF721
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-300 V
Collector-Emitter Voltage V
CEO
-300 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-100 mA
Continuous Collector Current I
C
-50 mA
Power Dissipation at T
amb
=25°C P
tot
-2 W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
BF721 V
(BR)CBO
-300 V
I
C
=-10µA, I
E
=0
Collector-Emitter
Breakdown
Voltage
BF721 V
(BR)CEO
-300 V I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-100µA, I
C
=0
Collector Cut-Off Current I
CBO
-10 nA V
CB
=-200V, I
E
=0 †
Collector Cut-Off
Current
I
CER
-50
-10
nA
µA
V
CE
=-200V, R
BE
=2.7KΩ
V
CE
=-200V, R
BE
=2.7KΩ †
Emitter Cut-Off Current I
EBO
-10
µA
V
EB
=-5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.6 V I
C
=-30mA, I
B
=-5mA*
Base Emitter
Saturation Voltage
V
BE(sat)
-0.9 V I
C
=-20mA, I
B
=-2mA*
Static Forward Current
Transfer Ratio
h
FE
-50 I
C
=-25mA, V
CE
=-20V*
Transition Frequency f
T
100 MHz I
C
=-10mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
0.8 pF V
CB
=-30V, f=1MHz
†T
amb
=150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA92 datasheet.
BF721
C
C
E
B
TBA
