INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor BD540A
DESCRIPTION
·DC Current Gain -
: h
FE
= 40(Min.)@ I
C
= -0.5A
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= -60V(Min)
·Complement to Type BD539A
APPLICATIONS
·Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL PARAMETER VALUE UNIT
V
CBO
Collector-Base Voltage -60 V
V
CEO
Collector-Emitter Voltage -60 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current-Continuous -5 A
Collector Power Dissipation
@ T
a
=25℃
2
P
C
Collector Power Dissipation
@ T
C
=25℃
45
W
T
J
Junction Temperature 150
℃
T
stg
S torage Temperature Range -65~150
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 2.78 ℃/W
R
th j-a
Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn
