BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with the
BD539 Series
●
45 W at 25°C Case Temperature
●
5 A Continuous Collector Current
●
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BD540
BD540A
BD540B
BD540C
V
CBO
-40
-60
-80
-100
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD540
BD540A
BD540B
BD540C
V
CEO
-40
-60
-80
-100
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
45 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
2W
Operating free air temperature range T
A
-65 to +150 °C
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
260 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
