BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
● Designed for Complementary Use with the
BD539 Series
● 45 W at 25°C Case Temperature
● 5 A Continuous Collector Current
● Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BD540
BD540A
BD540B
BD540C
V
CBO
-40
-60
-80
-100
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD540
BD540A
BD540B
BD540C
V
CEO
-40
-60
-80
-100
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
45 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
2 W
Operating free air temperature range T
A
-65 to +150 °C
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
260 °C