BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
● Designed for Complementary Use with the
BD540 Series
● 45 W at 25°C Case Temperature
● 5 A Continuous Collector Current
● Up to 120 V V
CEO
rating
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage
BD539
BD539A
BD539B
BD539C
BD539D
V
CBO
40
60
80
100
120
V
Collector-emitter voltage (see Note 1)
BD539
BD539A
BD539B
BD539C
BD539D
V
CEO
40
60
80
100
120
V
Emitter-base voltage V
EBO
5 V
Continuous collector current I
C
5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
45 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
2 W
Operating free air temperature range T
A
-65 to +150 °C
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
260 °C
