2003. 6. 16 1/1
SEMICONDUCTOR
TECHNICAL DATA
BD135
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
High Current. (Max. : 1.5A)
Low Voltage (Max. : 45V)
DC Current Gain : h
FE
=40Min. @I
C
=0.15A
Complementary to BD136.
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
45 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
1.5 A
Base Current
I
B
0.5 A
Collector Power
Dissipation
Ta=25
P
C
1.25
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
- - 10
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=30mA, I
B
=0
45 - - V
DC Current Gain
h
FE
(1) I
C
=5mA, V
CE
=2V
25 - -
h
FE
(2) I
C
=150mA, V
CE
=2V
40 - 250
h
FE
(3) I
C
=500mA, V
CE
=2V
25 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
- - 0.5 V
Base-Emitter Voltage
V
BE
V
CE
=2V, I
C
=500mA
- - 1.0 V
Transition Frequency
f
T
V
CE
=5V, I
C
=50mA
- 190 - MHz
