SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL BCX70G AG
BCX70H AH
BCX70J AJ
BCX70K AK
BCX70GR AW
BCX70HR 9P
BCX70JR AX
BCX70KR P9
COMPLEMENTARY TYPE BCX71
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
CES
45 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
200 mA
Base Current I
B
50 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group G h
FE
Group H h
FE
Group J h
FE
Group K
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h
11e
1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12
k
Ω
h
12e
1.5 2 2 3 10
-4
h
21e
200 260 330 520
h
22e
18 30 24 50 30 60 50 100
µS
SWITCHING CIRCUIT
BCX70
PAGE NO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage V
(BR)CEO
45 V I
C
=2mA
Emitter-Base Breakdown Voltage V
(BR)EBO
5V
I
EBO
=1
µ
A
Collector-Emitter Cut-off Current I
CES
20
20
nA
µA
V
CES
=45V
V
CES
=45V,
T
amb
=150oC
Emitter-Base Cut-Off Current I
EBO
20 nA V
EBO
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.20
0.35
0.55
V
V
I
C
=10mA,I
B
= 0.25mA
I
C
= 50mA, I
B
=1.25mA
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
I
C
=10mA,I
B
=0.25mA,
I
C
=50mA, I
B
=1.25mA
Base - Emitter Voltage V
BE
0.55
0.52
0.65
0.78
0.75
V
V
V
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Static Forward Current
Transfer Ratio
BCX70G
h
FE
120
50
78
170 220
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70H
h
FE
20
180
70
145
250 310
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70J
h
FE
40
250
90
220
350 460
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
BCX70K
h
FE
100
380
100
300
500 630
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Transition Frequency f
T
125 250 MHz I
C
=10mA, V
CE
=5V
f = 100MHz
Emitter-Base Capacitance C
ebo
8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance C
cbo
4.5 pF V
CBO
=10V, f =1MHz
Noise Figure N 2 6 dB I
C
= 0.2mA, V
CE
= 5V
R
G
=2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5KΩ, R
2
=5KΩ
V
BB
=3.6V, R
L
=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCX70
C
B
E
R
R R
50Ω
V (+10V)-V
+10V
t
< 5nsec
Z
≥ 100kΩ
Oscilloscope
1µsec
t
< 5nsec
Mark/Space ratio < 0.01
Z
=50Ω