SOT89 NPN SILICON P LANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – FEBRUARY 2007 ✪
FEA
TURES
* High gain and low saturation voltages
COMPLEMENTA RY TYPE – BCX69
PARTMARKIN G DETAI L – BCX68 – CE
BCX68-16 – CC
BCX68-25 – CD
ABSOLUTE MAXI MUM RATI NGS.
P ARAMETE R SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
25 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Co llector Current I
C
1A
Power Dissipa tion at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CO NDITIONS.
Collector-Base
Breakdown voltage
V
(BR)CBO
25 V
I
C
=100µA
Collector-Emitter
Breakdown Vo ltage
V
(BR)CEO
20 V I
C
=10mA
Emitter-Base
Breakdown Vo ltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
0.1
10
µA
µA
V
CB
=25V
V
CB
=25V, T
a
=150°C
Emitter Cut-Off Current I
EBO
10
µA
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0 V I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BCX68-16
BCX68-25
50
85
60
100
160 250
375
250
400
I
C
=5mA, V
CE
=10V
I
C
=500mA, V
CE
=1V
I
C
=1A, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V
Transition Fre quency f
T
100 MHz I
C
=100mA, V
CE
=5V,
f=100MHz
Output Capacita nce C
obo
25 pF V
CB
=10V, f=1MHz
*Measure d under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT449 datasheet.
BCX68
C
C
B
E
SOT89
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