SOT89 NPN SILICON P LANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996 ✪
PARTMARKING DET AILS:-
BCX54 – BA BCX54-10 – BC BCX54-16 – BD
BCX55 – BE BCX55-10 – BG BCX55-16 – BM
BCX56 – BH BCX56-10 – BK BCX56-16 – BL
COMPLEMENTARY TYPES:-
BCX54 – BCX51 BCX55 – BCX52 BCX56 – BCX53
ABSOLU TE MAXIM UM RATIN GS.
PARAMETER SYMBOL BCX54 BCX55 BCX56 UNIT
Collector-Base Voltage V
CBO
45 60 100 V
Collector-Emitter Voltage V
CEO
45 60 80 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRIC AL CH ARA CTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
BCX54
BCX55
BCX56
V
(BR)CBO
45
60
100
V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
BCX54
BCX55
BCX56
V
(BR)CEO
45
60
80
VI
C
=10mA*
Emitter- Ba se Break down Voltage V
(BR)EBO
5V
I
E
=10µA
Collector Cut-Off Current I
CBO
0.1
20
µA
µA
V
CB
=30V
V
CB
=30V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
20 nA V
EB
=4V
Collector-Emitter Saturation Voltage V
CE(sat)
0.5 V I
C
=500mA, I
B
=50mA*
Base-Emitter Turn-On Voltage V
BE(on)
1.0 V I
C
=500mA, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
–10
–16
25
40
25
63
100
250
160
250
I
C
=5mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=10V,
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=10V, f=1MHz
*Measur ed under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BCX54
BCX55
BCX56
C
C
B
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