SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
COMPLIMENTARY TYPE – BCX5616
PARTMARKING DETAIL – AL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-100 V
Collector-Emitter Voltage V
CEO
-80 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-1.5 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
V
(BR)CBO
-100 V
IC =-100
µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-80 V IC =-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-10µA
Collector Cut-Off
Current
I
CBO
-0.1
-20
µA
µA
V
CB
=-30V
V
CB
=-30V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-10
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5 V I
C
=-500mA, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0 V I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
25
100
25
250
I
C
=-5mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
Transition Frequency f
T
150 MHz I
C
=-50mA, V
CE
=-10V,
f=100MHz
Output Capacitance C
obo
25 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions.
BCX5316
TBA
C
C
B
E
SOT89