SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996 ✪
COMPLEMENTA RY TYPE – BCX51 – BCX54
BCX52 – BCX55
BCX53 – BCX56
PARTMARKING DETAILS –
BCX51 – AA BCX52 – AE BCX53 – AH
BCX51-10– AC BCX52-10– AG BCX53-10– AK
BCX51-16– AD BCX52-16– AM BCX53-16– AL
ABSOLUTE MAXI MUM RATI NGS.
P ARAMETER SYMBOL BCX51 BCX52 BCX53 UNIT
Collector-Base Voltage V
CBO
-45 -60 -100 V
Collector-Emitter Voltage V
CEO
-45 -60 -80 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-1.5 A
Continuous Co llector Current I
C
-1 A
Power Dissipa tion at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMET ER SYMBOL MIN. TYP. MAX. UNIT CONDIT IONS.
Collector-Base BCX53
Breakdown BCX52
Voltage BCX51
V
(BR)CBO
-100
-60
-45
V
V
V
I
C
=-100µA
I
C
=-100µA
I
C
=-100µA
Collector-Emitter BCX53
Breakdown BCX52
Voltage BCX51
V
(BR)CEO
-80
-60
-45
VI
C
=-10mA*
I
C
=-10mA*
I
C
=-10mA*
Emitter-Base
Breakdown Vo ltage
V
(BR)EBO
-5 V
I
E
=-10µA
Collector Cut-Off Current I
CBO
-0.1
-20
µA
µA
V
CB
=-30V
V
CB
=-30V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-20 nA V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5 V I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltag e
V
BE(on)
-1.0 V I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
-10
-16
25
40
25
63
100
250
160
250
I
C
=-5mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
Transition Fre quency f
T
150 MHz I
C
=-50mA , V
CE
=-10V,
f=100MHz
Output Capacita nce C
obo
25 pF V
CB
=-10V, f=1MHz
*Measure d under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BCX51
BCX52
BCX53
C
C
B
E
SOT89
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