SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 OCTOBER 1995 ✪
PARTMARKING DETAIL EK
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
CES
125 V
Collector-Emitter Voltage V
CEO
125 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1A
Continuous Collector Current I
C
800 mA
Base Current I
B
100 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
I
CES
100
10
nA
µA
V
CE
=100V
V
CE
=100V, T
amb
=150°C
Collector Cut-Off
Current
I
CEX
10
75
µA
µA
V
CE
=100V,V
BE
=0.2V,T
amb
=85°C
V
CE
=100V,V
BE
=0.2V,
T
amb
=125°C
Emitter Cut-Off
Current
I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.9 V I
C
=300mA, I
B
=30mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
1.4 V I
C
=300mA, I
B
=30mA *
Static Forward
Current Transfer Ratio
h
FE
25
63
40
I
C
=100µ A, V
CE
=1V
I
C
=100mA, V
CE
=1V *
I
C
=200mA, V
CE
=1V *
Transition Frequency f
T
100 MHz I
C
=10mA, V
CE
=5V
f =20MHz
Output Capacitance C
obo
12 pF V
CB
=10V, I
E
=I
e
=0, f =1MHz
* Measured under pulsed conditions. Pulse width = 300
µs. Duty cycle 2%
BCX41
1
3
2
3 - 33
