1999. 11. 30 1/1
SEMICONDUCTOR
TECHNICAL DATA
BCX19
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
Super Mini Packaged Transistors for Hybrid Circuits.
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
45 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CES
I
C
=10 A, V
BE
=0
50 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5.0 - - V
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
- - 100 nA
Ta=150 , V
CB
=20V, I
E
=0
- - 5.0
A
DC Current Gain
h
FE
V
CE
=1V, I
C
=100mA
100 - 600
V
CE
=1V, I
C
=300mA
70 - -
V
CE
=1V, I
C
=500mA
40 - -
Base-Emitter Voltage
V
BE(ON)
V
CE
=1V, I
C
=500mA
- - 1.2 V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
- - 0.62 V
Transition Frequency
f
T
I
C
=10mA, V
CE
=5V, f=100MHz
- 200 - MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz
- 6.0 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CEO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
500 mA
Emitter Current
I
E
-500 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
Lot No.
