SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS – BCX17 – T1
BCX17R – T4
COMPLIMENTARY TYPES - BCX19
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
CES
-50 V
Collector-Emitter Voltage (I
C
=-10mA) V
CEO
-45 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current I
C
-500 mA
Peak Collector Current I
CM
-1000 mA
Peak Emitter Current I
EM
-1000 mA
Base Current I
B
-100 mA
Peak Base Current I
BM
-200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
I
CBO
-100
-200
nA
µA
I
E
=0, V
CB
=-20V
I
E
=0, V
CB
=-20V, T
j
=150°C
Emitter-Base Cut-Off
Current
I
EBO
-10
µA
I
C
=0, V
EB
=-1V
Base-Emitter Voltage V
BE
-1.2 V I
C
=-500mA, V
CE
=-1V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
-620 mV I
C
=-500mA, I
B
=-50mA*
Static Forward Current
Transfer Ratio
h
FE
100
70
40
600
I
C
=-100mA, V
CE
=-1V
I
C
=-300mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
Transition Frequency f
T
100 MHz I
C
=-10mA, V
CE
=-5V
f =35MHz
Output Capacitance C
obo
8.0 pF V
CB
=-10V, f =1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
BCX17
C
B
E
SOT23
TBA
