SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 AUGUST 1995
PARTMARKING DETAILS
BCW60A AA BCW60AR CR
BCW60B AB BCW60BR DR
BCW60C AC BCW60CR AR
BCW60D AD BCW60DR BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
32 V
Collector-Emitter Voltage V
CEO
32 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
200 mA
Base Current I
B
50 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group A h
FE
Group B h
FE
Group C h
FE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h
11e
1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12
k
Ω
h
12e
1.5 2 2 3 10
-4
h
21e
200 260 330 520
h
22e
18 30 24 50 30 60 50 100
µS
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
32 V I
C
=2mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5V
I
EBO
=1µA
Collector-Emitter
Cut-off Current
I
CES
20
20
nA
µA
V
CES
=32V
V
CES
=32V ,T
amb
=150
o
C
Emitter-Base Cut-Off Current I
EBO
20 nA V
EBO
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.12
0.20
0.35
0.55
V
V
I
C
=10mA, I
B
=
0.25mA
I
C
= 50mA, I
B
=1.25mA
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
Base - Emitter Voltage V
BE
0.55
0.52
0.65
0.78
0.75
V
V
V
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
h
FE
120
50
78
170 220
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
20
180
70
145
250 310
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
40
250
90
220
350 460
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
100
380
100
300
500 630
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Transition Frequency f
T
125 250 MHz I
C
=10mA, V
CE
=5V
f = 100MHz
Emitter-Base Capacitance C
ebo
8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance C
cbo
4.5 pF V
CBO
=10V, f =1MHz
Noise Figure N 2 6 dB I
C
= 0.2mA, V
CE
= 5V
R
G
=2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5KΩ, R
2
=5KΩ
V
BB
=3.6V, R
L
=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R
R R
50Ω
V
CC
(+10V)-V
BB
+10V
t
r < 5nsec
Zin
≥
100k
Ω
Oscilloscope
1
µ
sec
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
Ω
