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BCW60CR

BCW60CR首页预览图
型号: BCW60CR
PDF文件:
  • BCW60CR PDF文件
  • BCW60CR PDF在线浏览
功能描述: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
PDF文件大小: 68.8 Kbytes
PDF页数: 共2页
制造商: ZETEX[Zetex Semiconductors]
制造商LOGO: ZETEX[Zetex Semiconductors] LOGO
制造商网址: http://www.diodes.com/
捡单宝BCW60CR
供应商
型号
品牌
封装
批号
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  • 深圳市安富世纪电子有限公司

    7

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    8

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  • BCW60CR
  • 一级代理 
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  • 462000 
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PDF页面索引
120%
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2  AUGUST 1995
PARTMARKING DETAILS
BCW60A  AA BCW60AR  CR
BCW60B  AB BCW60BR  DR
BCW60C  AC BCW60CR  AR
BCW60D  AD BCW60DR  BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
32 V
Collector-Emitter Voltage V
CEO
32 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
200 mA
Base Current I
B
50 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group A h
FE
Group B h
FE
Group C h
FE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h
11e
1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12
k
h
12e
1.5 2 2 3 10
-4
h
21e
200 260 330 520
h
22e
18 30 24 50 30 60 50 100
µS
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
32 V I
C
=2mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5V
I
EBO
=1µA
Collector-Emitter
Cut-off Current
I
CES
20
20
nA
µA
V
CES
=32V
V
CES
=32V ,T
amb
=150
o
C
Emitter-Base Cut-Off Current I
EBO
20 nA V
EBO
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.12
0.20
0.35
0.55
V
V
I
C
=10mA, I
B
=
0.25mA
I
C
= 50mA, I
B
=1.25mA
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
0.85
1.05
V
V
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
Base - Emitter Voltage V
BE
0.55
0.52
0.65
0.78
0.75
V
V
V
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
h
FE
120
50
78
170 220
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
20
180
70
145
250 310
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
40
250
90
220
350 460
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
100
380
100
300
500 630
I
C
=10µA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
Transition Frequency f
T
125 250 MHz I
C
=10mA, V
CE
=5V
f = 100MHz
Emitter-Base Capacitance C
ebo
8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance C
cbo
4.5 pF V
CBO
=10V, f =1MHz
Noise Figure N 2 6 dB I
C
= 0.2mA, V
CE
= 5V
R
G
=2KΩ, f=1KH
f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5KΩ, R
2
=5K
V
BB
=3.6V, R
L
=990
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R
R R
50
V
CC
(+10V)-V
BB
+10V
t
r < 5nsec
Zin
100k
Oscilloscope
1
µ
sec
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
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