2002. 6. 18 1/1
SEMICONDUCT
OR
TECHNICAL DATA
BCW31/32
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BCW29/30.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
Marking
Lot No.
D1
Type Name
Lot No.
D2
Type Name
BCW31 BCW32
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A
30 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=2mA
20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A
5 - - V
Collector Cut-off Current
I
CBO
V
CB
=30V
- - 100 nA
Emitter Cut-off Current
I
EBO
V
EB
=5V
- - 100 nA
DC Current Gain
BCW31
h
FE
V
CE
=5V, I
C
=2mA
110 - 220
BCW32 200 - 450
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=0.5mA
- - 0.25 V
Base-Emitter On Voltage
V
BE(ON)
V
CE
=5V, I
C
=2mA
0.55 - 0.7 V
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
- - 4 pF
Noise Figure NF
V
CE
=5V, I
C
=0.2mA
R
S
=2k , f=1kHz
- - 10 dB
