1999. 12. 29 1/1
SEMICONDUCTOR
TECHNICAL DATA
BCW29/30
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BCW31/32
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
Lot No.
Lot No.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-30 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A
-30 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-2mA
-20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A
-5 - - V
Collector Cut-off Current
I
CBO
V
CB
=-30V
- - -100 nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V
- - -100 nA
DC Current Gain
BCW29
h
FE
V
CE
=-5V, I
C
=-2mA
110 - 220
BCW30 200 - 450
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-0.5mA
- - -0.25 V
Base-Emitter On Voltage
V
BE(ON)
V
CE
=-5V, I
C
=-2mA
-0.55 - -0.7 V
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
- - 4 pF
Noise Figure NF
V
CE
=-5V, I
C
=-0.2mA
R
S
=2k , f=1kHz
- - 10 dB