SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 3 - JULY 1995
PARTMARKING DETAILS BCW29 - C1
BCW30 - C2
BCW29R - C4
BCW30R - C5
COMPLEMENTARY TYPES BCW29 - BCW31
BCW30 - BCW32
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-30 V
Collector-Emitter Voltage V
CEO
-30 V
Emitter-Base Voltage V
EBO
-20 V
Peak Pulse Current I
CM
-5 A
Continuous Collector Current I
C
-100 A
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base - Emitter Voltage V
BE
-600 -750 mV I
C
=-2mA, V
CE
=- 5V
Collector-Emitter Saturation
Voltage
V
CE(SAT)
-80
-150
250 mV
mV
I
C
=-10mA, I
B
=
- 0.5mA
I
C
=-50mA, I
B
=-2.5mA
Base-Emitter Saturation
Voltage
V
BE(SAT)
-720
-810
mV
mV
I
C
=-10mA, I
B
=-0.5mA
I
C
=-50mA, I
B
=-2.5mA
Collector- Base Cut-Off
Current
I
CBO
-100
-10
nA
µA
I
E
=0, V
CB
=-20V
I
E
=0,VCB=-20V,
T
j =
100
o
C
Static Forward
Current
Transfer
Ratio
BCW29
h
FE
120
90
260
I
C
=-10µA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
BCW30
h
FE
215
150
500
IC=-10
µA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
Transition Frequency f
T
150 MHz I
C
=-10mA, V
CE
=-5V
f = 35MHz
Collector Capacitance C
TC
7pFI
E
=I
e
=0, V
CB
=-10V
f= 1MHz
Noise Figure N 10 dB I
C
= -200mA, V
CE
=-5V
R
S
=2KΩ, f=1KHz
B= 200Hz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
BCW29
BCW30
C
B
E
