SOT89 NPN SILIC ON PLANAR
DARLINGTON TRANSISTOR
ISSUE 4 – JANUARY 1996
COMPLEMENTA RY TYPE – BCV28
PARTMARKIN G DETAI L – EF
ABSOLUTE MAXIMUM RATINGS.
PARAMETE R SYMBOL VALUE UNIT
Collector -Base Volta ge V
CBO
40 V
Collector-Emitte r Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Curr ent I
CM
800 mA
Continuo us Collector Current I
C
500 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature
Range
T
j
:T
stg
-65 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETE R SYMBOL MIN. TYP. MAX. UNIT CONDITIO NS.
Collector -Base
Breakdown Voltage
V
(BR)CBO
40 V
I
C
=100µA
Collector-Emitte r
Breakdown Voltage
V
(BR)CEO
30 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10 V
I
E
=10µA
Collector Cut-Off
Current
I
CBO
100
10
nA
µA
V
CB
=30V
V
CB
=30V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector-Emitte r
Saturation Voltage
V
CE(sat)
1VI
C
=100mA, I
B
-0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.5 V I
C
=100mA, I
B
=0.1mA*
Static Forward Current
Transfer Ratio
h
FE
4000
10000
20000
4000
I
C
=100µA, V
CE
=1V†
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Transition Fre quency f
T
150 MHz I
C
=50mA, V
CE
=5V
f = 20MHz
Output Capacita nce C
obo
3.5 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical graphs see FMMT38A datasheet † Periodic Sample Test Only.
Spice parameter data is available upon request for this device
BCV29
C
C
B
E
SOT89
3 - 24
