SOT89 NPN SILIC ON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - OCTOBER 1995 ✪
FEATURES
* SUITABLE FOR GE NER AL AF APPLICAT ION S AN D
CLASS B AUDIO OU TPUT STAGES UPTO 3W
* HIGH h
FE
AND LOW SATURATION VOLTAGE
COMPLEMEN TARY TY PE - BC869
PARTMARKI N G DETAI LS– BC868 - CAC
BC868-16 - CCC
BC868-25 - CDC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
25 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
25 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=10µA
Collector Cut-Off
Current
I
CBO
10
1
µA
mA
V
CB
= 25V
V
CB
= 25V,T
amb
=150
o
C
Emitter Cut-Off Current I
EBO
10
µA
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0 V I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BC868-16
BC868-25
50
85
60
100
160
375
250
375
I
C
=5mA, V
CE
=10V*
I
C
=500mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
Transition Frequency f
T
60 MHz I
C
=10mA, V
CE
=5V
f = 35MHz
Output Capacitance C
obo
45 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT449 datasheet.
BC868
3 - 11
C
C
B
E
SOT89
