1998. 6. 15 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC859/860
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
For Complementary with NPN Type BC849/850
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification A:125 250, B:220 475
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
BC859
V
CBO
-30
V
BC860 -50
Collector-Emitter
Voltage
BC859
V
CEO
-30
V
BC860 -45
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE BC859A BC859B BC860A BC860B
MARK 4A 4B 4E 4G
P
C
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
MARK SPEC
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter
Breakdown Voltage
BC859
V
(BR)CEO
I
C
=-10mA, I
B
=0
-30 - -
V
BC860 -45 - -
Collector-Base
Breakdown Voltage
BC859
V
(BR)CBO
I
C
=-10 A, I
E
=0
-30 - -
V
BC860 -50 - -
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5 - - V
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
- - -15 nA
DC Current Gain
h
FE
I
C
=-2mA, V
CE
=-5V
125 - 475
Base-Emitter Voltage
V
BE(ON)
1 I
C
=-2mA, V
CE
=-5V
-0.6 -0.65 -0.75
V
V
BE(ON)
2 I
C
=-10mA, V
CE
=-5V
- - -0.82
Collector-Emitter Saturation Voltage
V
CE(sat)
1 I
C
=-10mA, I
B
=-0.5mA
- -0.075 -0.3
V
V
CE(sat)
2 I
C
=-100mA, I
B
=-5mA
- -0.25 -0.65
Base-Emitter Saturation Voltage
V
BE(sat)
1 I
C
=-10mA, I
B
=-0.5mA
- -0.7 -
V
V
BE(sat)
2 I
C
=-100mA, I
B
=-5mA
- -0.85 -
Transition Frequency
f
T
I
C
=-10mA, V
CE
=-5V, f=100MHz
- 150 MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
- 4.5 - pF
Noise Figure NF
I
C
=-200 A, V
CE
=-5V
Rg=10k
, f=1kHz
- - 4.0 dB
Lot No.