1999. 3. 9 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC856/7/8
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With NPN Type BC846/847/848.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC856
V
CBO
-80
VBC857 -50
BC858 -30
Collector-Emitter
Voltage
BC856
V
CEO
-65
VBC857 -45
BC858 -30
Emitter-Base Voltage
BC856
V
EBO
-5
VBC857 -5
BC858 -5
Collector Current
I
C
-100 mA
Emitter Current
I
E
100 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MARK SPEC
Type Name
Marking
Lot No.
P
C
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
TYPE BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C
MARK 3A 3B 3E 3F 3G 3J 3K 3L
