2008. 8. 29 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC856W/7W/8W
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With NPN Type BC846W/847W/848W.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
MM
N
N
M 0.42 0.10
N 0.10 MIN
P0.1 MAX
+
_
+
_
+
_
+
_
+
_
P
1. EMITTER
2. BASE
3. COLLECTOR
MARK SPEC
TYPE BC856W-A BC856W-B BC857W-A BC857W-B BC857W-C BC858W-A BC858W-B BC858W-C
MARK 3A 3B 3E 3F 3G 3J 3K 3L
Type Name
Marking
Lot No.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC856W
V
CBO
-80
VBC857W -50
BC858W -30
Collector-Emitter
Voltage
BC856W
V
CEO
-65
VBC857W -45
BC858W -30
Emitter-Base Voltage
BC856W
V
EBO
-5
VBC857W -5
BC858W -5
Collector Current
I
C
-100 mA
Emitter Current
I
E
100 mA
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150