1999. 11. 30 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC849/850
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With PNP Type BC859/860.
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification B:200 450, C:420 800
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter
Breakdown Voltage
BC849
V
(BR)CEO
I
C
=10mA, I
B
=0
30 - -
V
BC850 45 - -
Collector-Base
Breakdown Voltage
BC849
V
(BR)CBO
I
C
=10 A, I
E
=0
30 - -
V
BC850 50 - -
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5 - - V
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
- - 15 nA
DC Current Gain
h
FE
(Note) I
C
=2mA, V
CE
=5V
200 - 800
Base-Emitter Voltage
V
BE(ON)
1 I
C
=2mA, V
CE
=5V
0.58 0.66 0.7
V
V
BE(ON)
2 I
C
=10mA, V
CE
=5V
- - 0.77
Collector-Emitter Saturation Voltage
V
CE(sat)
1 I
C
=10mA, I
B
=0.5mA
- 0.09 0.25
V
V
CE(sat)
2 I
C
=100mA, I
B
=5mA
- 0.2 0.6
Base-Emitter Saturation Voltage
V
BE(sat)
1 I
C
=10mA, I
B
=0.5mA
- 0.7 -
V
V
BE(sat)
2 I
C
=100mA, I
B
=5mA
- 0.9 -
Transition Frequency
f
T
I
C
=10mA, V
CE
=5V, f=100MHz
- 300 - MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
- 2.5 4.5 pF
Noise Figure
BC849
NF
I
C
=200 A, V
CE
=5V
Rg=10k
, f=1kHz
- - 4.0
dB
BC850 - - 1.0
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC849
V
CBO
30
V
BC850 50
Collector-Emitter Voltage
BC849
V
CEO
30
V
BC850 45
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
P
C
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
TYPE BC849B BC849C BC850B BC850C
MARK 2B 2C 2F 2G
MARK SPEC
Lot No.
