SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS COMPLEMENTARY TYPES
BC846AZ1A BC848B1K BC846 BC856
BC846B1B BC848CZ1L BC847 BC857
BC847AZ1E BC849B2B BC848 BC858
BC847B1F BC849C2C BC849 BC859
BC847C1GZ BC850B2FZ BC850 BC860
BC848A1JZ BC850C-Z2G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850
UNIT
Collector-Base Voltage V
CBO
80 50 30 30 50 V
Collector-Emitter Voltage V
CES
80 50 30 30 50 V
Collector-Emitter Voltage V
CEO
65 45 30 30 45 V
Emitter-Base Voltage V
EBO
65V
Continuous Collector Current I
C
100 mA
Peak Collector Current I
CM
200 mA
Peak Base Current I
BM
200 mA
Peak Emitter Current I
EM
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage
Temperature Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
BC846 BC847 BC848 BC849 BC850
UNIT CONDITIONS.
Collector Cut-Off Current I
CBO
Max
15
nA V
CB
= 30V
Max 5
µA
V
CB
= 30V
T
amb
=150°C
Collector-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
90
250
mV
mV
I
C
=10mA,
I
B
=0.5mA
Typ
Max.
200
600
mV
mV
I
C
=100mA,
I
B
=5mA
Typ
Max.
300
600
mV
mV
I
C
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
Typ
700 mV I
C
=10mA,
I
B
=0.5mA
Typ
900 mV I
C
=100mA,
I
B
=5mA
Base-Emitter Voltage V
BE
Min
Typ
Max
580
660
700
mV
mV
mV
I
C
=2mA
V
CE
=5V
Max
770 mV I
C
=10mA
V
CE
=5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
BC846 BC847
BC848 BC849
BC850
C
B
E
SOT23
