2008. 8. 13 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC846/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
High Voltage : BC846 V
CEO
=65V.
For Complementary With PNP Type BC856/857/858.
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
TYPE BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C
MARK 1A 1B 1E 1F 1G 1J 1K 1L
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC846
V
CBO
80
VBC847 50
BC848 30
Collector-Emitter
Voltage
BC846
V
CEO
65
VBC847 45
BC848 30
Emitter-Base Voltage
BC846
V
EBO
6
VBC847 6
BC848 5
Collector Current
I
C
100 mA
Emitter Current
I
E
-100 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MARK SPEC
Lot No.