SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – MARCH 2001
PARTMARKING DETAILS
BC80716 – 5AZ
BC80725 – 5BZ
BC80740 – 5CZ
COMPLEMENTARY TYPE BC817
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-45 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-1 A
Continuous Collector Current I
C
-500 mA
Base Current I
B
-100 mA
Peak Base Current I
BM
-200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
I
CBO
-0.1
-0.5
µA
V
CB
=-20V, I
E
=0
V
CB
=-20V, I
E
=0, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-10
µA
V
EB
=-5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-700 mV I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(on)
-1.2 V I
C
=-500mA, V
CE
=-1V*
Static Forward Current
Transfer Ratio
h
FE
BC80716 100 250 I
C
=-100mA, V
CE
=-1V*
BC80725 160 400 I
C
=-100mA, V
CE
=-1V*
BC80740 250 600 I
C
=-100mA, V
CE
=-1V*
All bands 40 I
C
=-500mA, V
CE
=-1V*
Transition Frequency f
T
100 MHz I
C
=-10mA, V
CE
=-5V
f=35MHz
Output Capacitance C
obo
8.0 pF V
CB
=-10V f=1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
BC807
C
B
E
SOT23
tba
