PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
* 1 Amp continuous current
*P
tot
= 800 mW
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-80 V
Collector-Emitter Voltage V
CEO
-80 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
800 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80 V
I
C
=-100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-80 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-10µA, I
C
=0
Collector Cut-Off Current I
CBO
-0.1
µA
V
CB
=-30V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5 V I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1.0 V IC=-500mA,V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
25
40
25
160
I
C
=-5mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
Transition
Frequency
f
T
200 MHz I
C
=-50mA, V
CE
=-2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
BC640
3-19
E
C
B
TO92
