2000. 10. 2 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC637
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH CURRENT TRANSISTORS.
FEATURES
ᴌComplementary to BC638.
MAXIMUM RATING (Ta=25ᴱ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
AJ
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
* Pulse Test : Pulse Widthᴪ300ỌS, Duty Cycle 2.0%
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
- - 100 nA
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=10mA, I
B
=0
60 - - V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100ỌA, I
E
=0
60 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10ỌA, I
C
=0
5.0 - - V
DC Current Gain
h
FE
V
CE
=2V, I
C
=150mA
40 - 160
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
- - 0.5 V
Base-Emitter Voltage
V
BE
V
CE
=2V, I
C
=500mA
- - 1.0 V
Transition Frequency
f
T
V
CE
=2V, I
C
=50mA, f=100MHz
- 200 - MHz
Input Capacitance
C
ib
V
EB
=0.5V, I
C
=0, f=1MHz
- 50 - pF
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
- 7.0 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
500 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
ᴱ
Storage Temperature
T
stg
-55ᴕ150
ᴱ