1999. 11. 30 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC549/550
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
For Complementary with PNP Type BC559/560.
MAXIMUM RATING (Ta=25 )
1. COLLECTOR
2. BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter
Breakdown Voltage
BC549
V
(BR)CEO
I
C
=10mA, I
B
=0
30 - -
V
BC550 45 - -
Collector-Base
Breakdown Voltage
BC549
V
(BR)CBO
I
C
=10 A, I
E
=0
30 - -
V
BC550 50 - -
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5.0 - - V
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
- - 15 nA
DC Current Gain
h
FE
(Note) I
C
=2mA, V
CE
=5V
110 - 800
Base-Emitter Voltage
V
BE(ON)
I
C
=2mA, V
CE
=5V
0.55 - 0.7 V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=5mA
- - 0.6 V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=100mA, I
B
=5mA
- 0.9 - V
Transition Frequency
f
T
I
C
=10mA, V
CE
=5V, f=100MHz
- 300 - MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
- - 4.5 pF
Noise Figure
BC549
NF
I
C
=200 A, V
CE
=5V
Rg=10k
, f=1kHz
- - 4.0
dB
BC550 - - 10
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC549
V
CBO
30
V
BC550 50
Collector-Emitter Voltage
BC549
V
CEO
30
V
BC550 45
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
Classification A:110 220, B:200 450, C:420 800