NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 SEPT 93
FEATURES
* 100 Volt V
CEO
* Gain of 8k at I
C
=250mA
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
100 V
Emitter-Base Voltage V
EBO
12 V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
100 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CES
100 V
I
C
=100µA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
12 V
I
E
=10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=80V, I
E
=0
Emitter Cut-Off Current I
EBO
100 nA V
EB
=10V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.1 V I
C
=250mA, I
B
=0.25mA
Base-Emitter
Saturation Voltage
V
BE(sat)
2VI
C
=250mA, I
B
=0.25mA
Static Forward Current
Transfer Ratio
h
FE
10K
8K
I
C
=100mA, V
CE
=5V*
I
C
=250mA, V
CE
=5V*
Transition
Frequency
f
T
100 MHz I
C
=100mA, V
CE
=5V
f=100MHz
Output Capacitance C
obo
25 pF V
CB
=10V, f=1MHz
E-Line
TO92 Compatible
C
B
E
BC372P
3-17
PART OBSOLETE - USE ZTX603