2000. 2. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC337
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current : I
C
=800mA.
DC Current Gain : h
FE
=100 630 (V
CE
=1V, I
c
=100mA).
For Complementary with PNP type BC327.
MAXIMUM RATING (Ta=25 )
1. COLLECTOR
2. BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
800 mA
Emitter Current
I
E
-800 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
V
CB
=45V, I
E
=0
- - 100 nA
DC Current Gain (Note)
h
FE
V
CE
=1V, I
C
=100mA
100 - 630
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
- - 0.7 V
Base-Emitter Voltage
V
BE(ON)
V
CE
=1V, I
C
=300mA
- - 1.2 V
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA, f=100MHz
- 100 - MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
- 16 - pF
Note : h
FE
Classification none:100 630, 16:100 250, 25:160 400, 40:250 630
